Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3.0mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Length
2.9mm
Maximum Operating Temperature
+125 °C
Width
1.5mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 3,99
€ 0,399 tk (pakis 10) (ilma käibemaksuta)
€ 4,87
€ 0,487 tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 3,99
€ 0,399 tk (pakis 10) (ilma käibemaksuta)
€ 4,87
€ 0,487 tk (pakis 10) (koos käibemaksuga)
Standard
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 90 | € 0,399 | € 3,99 |
100+ | € 0,25 | € 2,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3.0mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Length
2.9mm
Maximum Operating Temperature
+125 °C
Width
1.5mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.