Toshiba Silicon P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4e+008 Ω
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 318,00
€ 0,106 tk (rullis 3000) (ilma käibemaksuta)
€ 394,32
€ 0,131 tk (rullis 3000) (koos käibemaksuga)
3000
€ 318,00
€ 0,106 tk (rullis 3000) (ilma käibemaksuta)
€ 394,32
€ 0,131 tk (rullis 3000) (koos käibemaksuga)
3000
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4e+008 Ω
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products