Toshiba TK N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S

RS tootekood: 896-2647Bränd: ToshibaTootja Part nr.: TK10A80E,S4X(S
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

800 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Height

15mm

Päritoluriik

China

Toote üksikasjad

MOSFET Transistors, Toshiba

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€ 5,75

€ 1,15 tk (pakis 5) (ilma käibemaksuta)

€ 7,13

€ 1,426 tk (pakis 5) (koos käibemaksuga)

Toshiba TK N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S

€ 5,75

€ 1,15 tk (pakis 5) (ilma käibemaksuta)

€ 7,13

€ 1,426 tk (pakis 5) (koos käibemaksuga)

Toshiba TK N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S

Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

kogusÜhikuhindPer Pakend
5 - 20€ 1,15€ 5,75
25 - 95€ 1,00€ 5,00
100 - 245€ 0,877€ 4,38
250 - 495€ 0,821€ 4,10
500+€ 0,773€ 3,86

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

800 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Height

15mm

Päritoluriik

China

Toote üksikasjad

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more