Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
40.5mm
Width
4.8mm
Transistor Material
Si
Series
TK
Minimum Operating Temperature
-55 °C
Height
19mm
Päritoluriik
Japan
Toote üksikasjad
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 4,80
tk (ilma käibemaksuta)
€ 5,86
tk (koos käibemaksuga)
1
€ 4,80
tk (ilma käibemaksuta)
€ 5,86
tk (koos käibemaksuga)
1
Osta lahtiselt
kogus | Ühikuhind |
---|---|
1 - 9 | € 4,80 |
10 - 19 | € 3,55 |
20+ | € 3,40 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
40.5mm
Width
4.8mm
Transistor Material
Si
Series
TK
Minimum Operating Temperature
-55 °C
Height
19mm
Päritoluriik
Japan
Toote üksikasjad