N-Channel MOSFET, 112 A, 120 V, 3-Pin TO-220 Toshiba TK56E12N1,S1X(S

RS tootekood: 125-0578Bränd: ToshibaTootja Part nr.: TK56E12N1,S1X(S
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

120 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

168 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

69 nC @ 10 V

Height

15.1mm

Series

U-MOSVIII-H

Forward Diode Voltage

1.2V

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MOSFET Transistors, Toshiba

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,825

tk (pakis 10) (ilma käibemaksuta)

€ 1,007

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 112 A, 120 V, 3-Pin TO-220 Toshiba TK56E12N1,S1X(S

10

Saadaval mitmekordselt 10
10€ 8,25
20€ 16,50
30€ 24,75
40€ 33,00
50€ 37,10
60€ 44,52
70€ 51,94
80€ 59,36
90€ 66,78
100€ 69,10
110€ 76,01
120€ 82,92
130€ 89,83
140€ 96,74
150€ 103,65

€ 0,825

tk (pakis 10) (ilma käibemaksuta)

€ 1,007

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 112 A, 120 V, 3-Pin TO-220 Toshiba TK56E12N1,S1X(S
Lao andmed ajutiselt ei ole saadaval.

10

Saadaval mitmekordselt 10
10€ 8,25
20€ 16,50
30€ 24,75
40€ 33,00
50€ 37,10
60€ 44,52
70€ 51,94
80€ 59,36
90€ 66,78
100€ 69,10
110€ 76,01
120€ 82,92
130€ 89,83
140€ 96,74
150€ 103,65

Osta lahtiselt

kogusÜhikuhindPer Pakend
10 - 40€ 0,825€ 8,25
50 - 90€ 0,742€ 7,42
100+€ 0,691€ 6,91

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

120 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

168 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

69 nC @ 10 V

Height

15.1mm

Series

U-MOSVIII-H

Forward Diode Voltage

1.2V

Toote üksikasjad

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more