Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.04mm
Width
1.4mm
Number of Elements per Chip
1
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.02mm
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,171
tk (rullis 3000) (ilma käibemaksuta)
€ 0,209
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,171
tk (rullis 3000) (ilma käibemaksuta)
€ 0,209
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.04mm
Width
1.4mm
Number of Elements per Chip
1
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.02mm
Päritoluriik
China