N-Channel MOSFET, 65.8 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR106ADP-T1-RE3

RS tootekood: 200-6863Bränd: VishayTootja Part nr.: SiR106ADP-T1-RE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

65.8 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK SO-8

Series

TrenchFET® Gen IV

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.008 Ω, 0.009 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

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Lao andmed ajutiselt ei ole saadaval.

€ 0,808

tk (rullis 3000) (ilma käibemaksuta)

€ 0,986

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 65.8 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR106ADP-T1-RE3

€ 0,808

tk (rullis 3000) (ilma käibemaksuta)

€ 0,986

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 65.8 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR106ADP-T1-RE3
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

65.8 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK SO-8

Series

TrenchFET® Gen IV

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.008 Ω, 0.009 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more