Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
48.2 nC @ 10 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,425
tk (rullis) (ilma käibemaksuta)
€ 0,519
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
10
€ 0,425
tk (rullis) (ilma käibemaksuta)
€ 0,519
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
10
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.47mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
48.2 nC @ 10 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Päritoluriik
China