Vishay N-Channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK IRFU1N60APBF

RS tootekood: 812-0660Bränd: VishayTootja Part nr.: IRFU1N60APBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

600 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

2.39mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

6.22mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Toote üksikasjad

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 12,50

€ 1,25 tk (pakis 10) (ilma käibemaksuta)

€ 15,50

€ 1,55 tk (pakis 10) (koos käibemaksuga)

Vishay N-Channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK IRFU1N60APBF
Valige pakendi tüüp

€ 12,50

€ 1,25 tk (pakis 10) (ilma käibemaksuta)

€ 15,50

€ 1,55 tk (pakis 10) (koos käibemaksuga)

Vishay N-Channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK IRFU1N60APBF

Lao andmed ajutiselt ei ole saadaval.

Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

600 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

2.39mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

6.22mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Toote üksikasjad

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more