Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Height
1.04mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 9,25
€ 1,85 tk (pakis 5) (ilma käibemaksuta)
€ 11,47
€ 2,294 tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 9,25
€ 1,85 tk (pakis 5) (ilma käibemaksuta)
€ 11,47
€ 2,294 tk (pakis 5) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
5
Lao andmed ajutiselt ei ole saadaval.
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 45 | € 1,85 | € 9,25 |
50 - 120 | € 1,60 | € 8,00 |
125 - 245 | € 1,40 | € 7,00 |
250 - 495 | € 1,15 | € 5,75 |
500+ | € 0,896 | € 4,48 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Height
1.04mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad