HMC636ST89E Analog Devices, RF Amplifier Low Noise, Wide Band, 13 dB 4 GHz, 3-Pin SOT-89
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Analog DevicesAmplifier Type
Low Noise, Wide Band
Typical Power Gain
13 dB
Typical Output Power
23dBm
Typical Noise Figure
2.5dB
Number of Channels per Chip
1
Maximum Operating Frequency
4 GHz
Mounting Type
Surface Mount
Package Type
SOT-89
Pin Count
3
Dimensions
4.6 x 2.59 x 1.6mm
Height
1.6mm
Length
4.6mm
Series
Hittite
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+85 °C
Maximum Operating Supply Voltage
5 V
Width
2.59mm
Toote üksikasjad
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.
Radio Frequency (RF) Amplifiers, Analog Devices
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€ 9,00
tk (rullis) (ilma käibemaksuta)
€ 10,98
tk (rullis) (koos käibemaksuga)
1
€ 9,00
tk (rullis) (ilma käibemaksuta)
€ 10,98
tk (rullis) (koos käibemaksuga)
1
Osta lahtiselt
| kogus | Ühikuhind |
|---|---|
| 1 - 9 | € 9,00 |
| 10 - 49 | € 7,70 |
| 50 - 99 | € 7,50 |
| 100 - 249 | € 6,40 |
| 250+ | € 5,90 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Analog DevicesAmplifier Type
Low Noise, Wide Band
Typical Power Gain
13 dB
Typical Output Power
23dBm
Typical Noise Figure
2.5dB
Number of Channels per Chip
1
Maximum Operating Frequency
4 GHz
Mounting Type
Surface Mount
Package Type
SOT-89
Pin Count
3
Dimensions
4.6 x 2.59 x 1.6mm
Height
1.6mm
Length
4.6mm
Series
Hittite
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+85 °C
Maximum Operating Supply Voltage
5 V
Width
2.59mm
Toote üksikasjad
RF Amplifiers, Analog Devices Hittite
Analog Devices Hittite have a series of RF amplifiers that have a range of functions. Some feature low Noise amplifiers, some RF Amplifiers are integrated with resonators, negative resistance devices, varactor diodes, and buffer amplifiers and other offer high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers.