Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
7 A, 8.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ, 53 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16.1 nC @ 10 V, 21.1 nC @ 4.5 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.5mm
Päritoluriik
China
Toote üksikasjad
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 42,50
€ 0,34 tk (rullis) (ilma käibemaksuta)
€ 51,85
€ 0,415 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
125
€ 42,50
€ 0,34 tk (rullis) (ilma käibemaksuta)
€ 51,85
€ 0,415 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
125
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
125 - 600 | € 0,34 | € 8,50 |
625 - 1225 | € 0,283 | € 7,08 |
1250+ | € 0,228 | € 5,70 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
7 A, 8.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ, 53 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16.1 nC @ 10 V, 21.1 nC @ 4.5 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.5mm
Päritoluriik
China
Toote üksikasjad