Diodes Inc Dual N/P-Channel MOSFET, 280 mA, 620 mA, 60 V, 6-Pin SOT-563 DMG1029SV-7

RS tootekood: 822-2523PBränd: DiodesZetexTootja Part nr.: DMG1029SV-7
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N, P

Maximum Continuous Drain Current

280 mA, 620 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.7 Ω, 6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.25mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Length

1.7mm

Typical Gate Charge @ Vgs

0.28 nC @ 4.5 V, 0.3 nC @ 4.5 V

Height

0.6mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 129,60

tk (rullis) (ilma käibemaksuta)

€ 160,70

tk (rullis) (koos käibemaksuga)

Diodes Inc Dual N/P-Channel MOSFET, 280 mA, 620 mA, 60 V, 6-Pin SOT-563 DMG1029SV-7
Valige pakendi tüüp

€ 129,60

tk (rullis) (ilma käibemaksuta)

€ 160,70

tk (rullis) (koos käibemaksuga)

Diodes Inc Dual N/P-Channel MOSFET, 280 mA, 620 mA, 60 V, 6-Pin SOT-563 DMG1029SV-7
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N, P

Maximum Continuous Drain Current

280 mA, 620 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.7 Ω, 6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.25mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Length

1.7mm

Typical Gate Charge @ Vgs

0.28 nC @ 4.5 V, 0.3 nC @ 4.5 V

Height

0.6mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more