N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 Diodes Inc DMG2302UK-7

RS tootekood: 133-3362Bränd: DiodesZetexTootja Part nr.: DMG2302UK-7
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Series

DMG2302UK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

2.8 nC @ 10 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1mm

Minimum Operating Temperature

-55 °C

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N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,164

tk (pakis 100) (ilma käibemaksuta)

€ 0,20

tk (pakis 100) (koos käibemaksuga)

N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 Diodes Inc DMG2302UK-7
Valige pakendi tüüp

€ 0,164

tk (pakis 100) (ilma käibemaksuta)

€ 0,20

tk (pakis 100) (koos käibemaksuga)

N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 Diodes Inc DMG2302UK-7
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
100 - 400€ 0,164€ 16,40
500 - 900€ 0,14€ 14,00
1000 - 1900€ 0,124€ 12,40
2000 - 2900€ 0,111€ 11,10
3000+€ 0,101€ 10,10

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Series

DMG2302UK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

2.8 nC @ 10 V

Width

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more