Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Series
DMG2302UK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
2.8 nC @ 10 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,164
tk (pakis 100) (ilma käibemaksuta)
€ 0,20
tk (pakis 100) (koos käibemaksuga)
100
€ 0,164
tk (pakis 100) (ilma käibemaksuta)
€ 0,20
tk (pakis 100) (koos käibemaksuga)
100
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
100 - 400 | € 0,164 | € 16,40 |
500 - 900 | € 0,14 | € 14,00 |
1000 - 1900 | € 0,124 | € 12,40 |
2000 - 2900 | € 0,111 | € 11,10 |
3000+ | € 0,101 | € 10,10 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Series
DMG2302UK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
2.8 nC @ 10 V
Width
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad