Diodes Inc Dual N/P-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK DMG4511SK4-13
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
9.3 A, 9.6 A
Maximum Drain Source Voltage
35 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.9 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
2
Length
6.7mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V, 19.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 41,00
€ 0,41 tk (rullis) (ilma käibemaksuta)
€ 50,02
€ 0,50 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
€ 41,00
€ 0,41 tk (rullis) (ilma käibemaksuta)
€ 50,02
€ 0,50 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 100 - 480 | € 0,41 | € 8,20 |
| 500 - 980 | € 0,367 | € 7,34 |
| 1000+ | € 0,328 | € 6,56 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
9.3 A, 9.6 A
Maximum Drain Source Voltage
35 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.9 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
2
Length
6.7mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V, 19.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products