N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7

RS tootekood: 182-6883Bränd: DiodesZetexTootja Part nr.: DMN1004UFDF-7
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

12 (State) A, 15 (Steady) A

Maximum Drain Source Voltage

12 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+150 °C

Length

2.05mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Width

2.05mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.58mm

Päritoluriik

China

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,133

tk (rullis 3000) (ilma käibemaksuta)

€ 0,162

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7

€ 0,133

tk (rullis 3000) (ilma käibemaksuta)

€ 0,162

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1004UFDF-7
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

12 (State) A, 15 (Steady) A

Maximum Drain Source Voltage

12 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+150 °C

Length

2.05mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Width

2.05mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.58mm

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more