Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
12.2 A
Maximum Drain Source Voltage
12 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
12.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
23.4 nC @ 8 V
Width
2.05mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Height
0.58mm
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,11
tk (rullis 3000) (ilma käibemaksuta)
€ 0,134
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,11
tk (rullis 3000) (ilma käibemaksuta)
€ 0,134
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
12.2 A
Maximum Drain Source Voltage
12 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
12.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
23.4 nC @ 8 V
Width
2.05mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Height
0.58mm
Päritoluriik
China