N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2056U-7

RS tootekood: 133-3376Bränd: DiodesZetexTootja Part nr.: DMN2056U-7
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Series

DMN2056U

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

940 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

4.3 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,345

tk (pakis 50) (ilma käibemaksuta)

€ 0,421

tk (pakis 50) (koos käibemaksuga)

N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2056U-7
Valige pakendi tüüp

€ 0,345

tk (pakis 50) (ilma käibemaksuta)

€ 0,421

tk (pakis 50) (koos käibemaksuga)

N-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2056U-7
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
50 - 450€ 0,345€ 17,25
500 - 950€ 0,155€ 7,75
1000 - 1950€ 0,12€ 6,00
2000 - 2950€ 0,115€ 5,75
3000+€ 0,103€ 5,15

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Series

DMN2056U

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

940 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

4.3 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Toote üksikasjad

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more