Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
650 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.3mm
Country of Origin
China
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 3.18
€ 0.127 Each (Supplied as a Tape) (Exc. Vat)
€ 3.94
€ 0.157 Each (Supplied as a Tape) (inc. VAT)
Standard
25
€ 3.18
€ 0.127 Each (Supplied as a Tape) (Exc. Vat)
€ 3.94
€ 0.157 Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
215 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
650 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.3mm
Country of Origin
China
Product details


