Diodes Inc N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B

RS tootekood: 122-1467Bränd: DiodesZetexTootja Part nr.: DMN2300UFB4-7B
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

0.65mm

Length

1.05mm

Typical Gate Charge @ Vgs

1.6 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.35mm

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 670,00

€ 0,067 tk (rullis 10000) (ilma käibemaksuta)

€ 830,80

€ 0,083 tk (rullis 10000) (koos käibemaksuga)

Diodes Inc N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B

€ 670,00

€ 0,067 tk (rullis 10000) (ilma käibemaksuta)

€ 830,80

€ 0,083 tk (rullis 10000) (koos käibemaksuga)

Diodes Inc N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 DMN2300UFB4-7B
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.95V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

0.65mm

Length

1.05mm

Typical Gate Charge @ Vgs

1.6 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.35mm

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more