Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
0.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.05mm
Typical Gate Charge @ Vgs
1.3 nC @ 10 V
Height
0.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,037
tk (rullis 3000) (ilma käibemaksuta)
€ 0,045
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,037
tk (rullis 3000) (ilma käibemaksuta)
€ 0,045
tk (rullis 3000) (koos käibemaksuga)
3000
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
3000 - 6000 | € 0,037 | € 111,00 |
9000 - 12000 | € 0,036 | € 108,00 |
15000+ | € 0,036 | € 108,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
0.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.05mm
Typical Gate Charge @ Vgs
1.3 nC @ 10 V
Height
0.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Päritoluriik
China