Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
520 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Length
3mm
Height
1mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,063
tk (rullis 3000) (ilma käibemaksuta)
€ 0,077
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,063
tk (rullis 3000) (ilma käibemaksuta)
€ 0,077
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
520 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Length
3mm
Height
1mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad