Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
12.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
Product details
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 10.60
€ 0.212 Each (In a Pack of 50) (Exc. Vat)
€ 13.14
€ 0.263 Each (In a Pack of 50) (inc. VAT)
Standard
50
€ 10.60
€ 0.212 Each (In a Pack of 50) (Exc. Vat)
€ 13.14
€ 0.263 Each (In a Pack of 50) (inc. VAT)
Standard
50
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
50 - 200 | € 0.212 | € 10.60 |
250 - 950 | € 0.186 | € 9.30 |
1000 - 1950 | € 0.182 | € 9.10 |
2000 - 2950 | € 0.176 | € 8.80 |
3000+ | € 0.172 | € 8.60 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
12.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
Product details