Diodes Inc N-Channel MOSFET, 2.5 A, 60 V, 3-Pin SOT-23 DMN6075S-7

RS Stock No.: 921-1280Brand: DiodesZetexManufacturers Part No.: DMN6075S-7
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.15 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

12.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Product details

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

€ 10.60

€ 0.212 Each (In a Pack of 50) (Exc. Vat)

€ 13.14

€ 0.263 Each (In a Pack of 50) (inc. VAT)

Diodes Inc N-Channel MOSFET, 2.5 A, 60 V, 3-Pin SOT-23 DMN6075S-7
Select packaging type

€ 10.60

€ 0.212 Each (In a Pack of 50) (Exc. Vat)

€ 13.14

€ 0.263 Each (In a Pack of 50) (inc. VAT)

Diodes Inc N-Channel MOSFET, 2.5 A, 60 V, 3-Pin SOT-23 DMN6075S-7
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
50 - 200€ 0.212€ 10.60
250 - 950€ 0.186€ 9.30
1000 - 1950€ 0.182€ 9.10
2000 - 2950€ 0.176€ 8.80
3000+€ 0.172€ 8.60

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.15 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

12.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Product details

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more