Diodes Inc P-Channel MOSFET, 17.5 A, 20 V, 8-Pin PowerDI3333-8 DMP2006UFG-7

RS Stock No.: 921-1139Brand: DiodesZetexManufacturers Part No.: DMP2006UFG-7
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

17.5 A

Maximum Drain Source Voltage

20 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

3.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.35mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

€ 12.70

€ 0.635 Each (In a Pack of 20) (Exc. Vat)

€ 15.49

€ 0.775 Each (In a Pack of 20) (inc. VAT)

Diodes Inc P-Channel MOSFET, 17.5 A, 20 V, 8-Pin PowerDI3333-8 DMP2006UFG-7
Select packaging type

€ 12.70

€ 0.635 Each (In a Pack of 20) (Exc. Vat)

€ 15.49

€ 0.775 Each (In a Pack of 20) (inc. VAT)

Diodes Inc P-Channel MOSFET, 17.5 A, 20 V, 8-Pin PowerDI3333-8 DMP2006UFG-7
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
20 - 80€ 0.635€ 12.70
100 - 480€ 0.443€ 8.86
500 - 980€ 0.398€ 7.96
1000 - 2480€ 0.355€ 7.10
2500+€ 0.319€ 6.38

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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

17.5 A

Maximum Drain Source Voltage

20 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

3.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.35mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more