Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
18.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
17.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.55mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.55mm
Typical Gate Charge @ Vgs
53.1 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.65mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 13,88
€ 0,694 tk (pakis 20) (ilma käibemaksuta)
€ 17,21
€ 0,861 tk (pakis 20) (koos käibemaksuga)
Standard
20
€ 13,88
€ 0,694 tk (pakis 20) (ilma käibemaksuta)
€ 17,21
€ 0,861 tk (pakis 20) (koos käibemaksuga)
Standard
20
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
20 - 80 | € 0,694 | € 13,88 |
100 - 480 | € 0,611 | € 12,22 |
500 - 980 | € 0,595 | € 11,90 |
1000 - 2480 | € 0,579 | € 11,58 |
2500+ | € 0,566 | € 11,32 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
18.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
17.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.55mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.55mm
Typical Gate Charge @ Vgs
53.1 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.65mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad