Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
60 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.97 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
17.2 @ 10 V nC
Width
2.05mm
Number of Elements per Chip
1
Series
DMP
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
0.58mm
Toote üksikasjad
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,12
tk (pakis 100) (ilma käibemaksuta)
€ 0,146
tk (pakis 100) (koos käibemaksuga)
100
€ 0,12
tk (pakis 100) (ilma käibemaksuta)
€ 0,146
tk (pakis 100) (koos käibemaksuga)
100
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
60 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.97 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
2.05mm
Typical Gate Charge @ Vgs
17.2 @ 10 V nC
Width
2.05mm
Number of Elements per Chip
1
Series
DMP
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
0.58mm
Toote üksikasjad