Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Typical Gate Charge @ Vgs
3.8 nC @ 5 V, 6.4 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 3,00
€ 0,30 tk (pakis 10) (ilma käibemaksuta)
€ 3,66
€ 0,366 tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 3,00
€ 0,30 tk (pakis 10) (ilma käibemaksuta)
€ 3,66
€ 0,366 tk (pakis 10) (koos käibemaksuga)
Standard
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 20 | € 0,30 | € 3,00 |
30 - 140 | € 0,178 | € 1,78 |
150 - 740 | € 0,156 | € 1,56 |
750 - 1490 | € 0,132 | € 1,32 |
1500+ | € 0,108 | € 1,08 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Typical Gate Charge @ Vgs
3.8 nC @ 5 V, 6.4 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad