Diodes Inc P-Channel MOSFET, 1.6 A, 30 V, 3-Pin SOT-23 ZXMP3A13FTA

RS tootekood: 669-7518Bränd: DiodesZetexTootja Part nr.: ZXMP3A13FTA
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Typical Gate Charge @ Vgs

3.8 nC @ 5 V, 6.4 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 3,00

€ 0,30 tk (pakis 10) (ilma käibemaksuta)

€ 3,66

€ 0,366 tk (pakis 10) (koos käibemaksuga)

Diodes Inc P-Channel MOSFET, 1.6 A, 30 V, 3-Pin SOT-23 ZXMP3A13FTA
Valige pakendi tüüp

€ 3,00

€ 0,30 tk (pakis 10) (ilma käibemaksuta)

€ 3,66

€ 0,366 tk (pakis 10) (koos käibemaksuga)

Diodes Inc P-Channel MOSFET, 1.6 A, 30 V, 3-Pin SOT-23 ZXMP3A13FTA
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
10 - 20€ 0,30€ 3,00
30 - 140€ 0,178€ 1,78
150 - 740€ 0,156€ 1,56
750 - 1490€ 0,132€ 1,32
1500+€ 0,108€ 1,08

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Typical Gate Charge @ Vgs

3.8 nC @ 5 V, 6.4 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more