Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
29.6 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.8mm
Toote üksikasjad
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 4,86
€ 0,971 tk (pakis 5) (ilma käibemaksuta)
€ 6,03
€ 1,204 tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 4,86
€ 0,971 tk (pakis 5) (ilma käibemaksuta)
€ 6,03
€ 1,204 tk (pakis 5) (koos käibemaksuga)
Standard
5
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 20 | € 0,971 | € 4,86 |
25 - 45 | € 0,688 | € 3,44 |
50 - 245 | € 0,606 | € 3,03 |
250 - 495 | € 0,518 | € 2,59 |
500+ | € 0,496 | € 2,48 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
29.6 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.8mm
Toote üksikasjad