P-Channel MOSFET, 10.4 A, 60 V, 3-Pin DPAK Diodes Inc ZXMP6A18KTC

RS tootekood: 738-5178Bränd: DiodesZetexTootja Part nr.: ZXMP6A18KTC
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

10.4 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

10.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

23 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

7.67mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.39mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 0,866

tk (pakis 2) (ilma käibemaksuta)

€ 1,057

tk (pakis 2) (koos käibemaksuga)

P-Channel MOSFET, 10.4 A, 60 V, 3-Pin DPAK Diodes Inc ZXMP6A18KTC
Valige pakendi tüüp

€ 0,866

tk (pakis 2) (ilma käibemaksuta)

€ 1,057

tk (pakis 2) (koos käibemaksuga)

P-Channel MOSFET, 10.4 A, 60 V, 3-Pin DPAK Diodes Inc ZXMP6A18KTC
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
2 - 24€ 0,866€ 1,73
26+€ 0,588€ 1,18

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

10.4 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

10.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

23 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

7.67mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.39mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more