Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Series
IntelliFET
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.13 W
Transistor Configuration
Isolated
Number of Elements per Chip
2
Maximum Operating Temperature
+125 °C
Length
4.95mm
Width
3.95mm
Transistor Material
Si
Minimum Operating Temperature
-40 °C
Height
1.5mm
Päritoluriik
Germany
Toote üksikasjad
IntelliFET Self-protected MOSFETs, Diodes Inc
IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.
MOSFET Transistors, Diodes Inc.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,577
tk (rullis) (ilma käibemaksuta)
€ 0,704
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
5
€ 0,577
tk (rullis) (ilma käibemaksuta)
€ 0,704
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
5
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
60 V
Series
IntelliFET
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.13 W
Transistor Configuration
Isolated
Number of Elements per Chip
2
Maximum Operating Temperature
+125 °C
Length
4.95mm
Width
3.95mm
Transistor Material
Si
Minimum Operating Temperature
-40 °C
Height
1.5mm
Päritoluriik
Germany
Toote üksikasjad
IntelliFET Self-protected MOSFETs, Diodes Inc
IntelliFET are self-protected MOSFETs that integrate a complete array of protection circuits that guard against ESD (Electrostatic Sensitive Device), over-current, over-voltage, and over-temperature conditions.