Fuji Electric 1MBI900V-120-50 Single IGBT Module, 900 A 1200 V, 4-Pin M153, Panel Mount
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Fuji ElectricMaximum Continuous Collector Current
900 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
4.28 kW
Package Type
M153
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
108 x 62 x 36mm
Maximum Operating Temperature
+150 °C
Päritoluriik
Japan
Toote üksikasjad
IGBT Modules 1-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 208,00
tk (pakis 10) (ilma käibemaksuta)
€ 253,76
tk (pakis 10) (koos käibemaksuga)
10
€ 208,00
tk (pakis 10) (ilma käibemaksuta)
€ 253,76
tk (pakis 10) (koos käibemaksuga)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Fuji ElectricMaximum Continuous Collector Current
900 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
4.28 kW
Package Type
M153
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
108 x 62 x 36mm
Maximum Operating Temperature
+150 °C
Päritoluriik
Japan
Toote üksikasjad
IGBT Modules 1-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products