Fuji Electric 2MBi300U4J-120-50, M250 , N-Channel Series IGBT Module, 300 A max, 1200 V, PCB Mount
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Fuji ElectricMaximum Continuous Collector Current
300 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.39 kW
Package Type
M250
Configuration
Series
Mounting Type
PCB Mount
Channel Type
N
Pin Count
15
Transistor Configuration
Series
Dimensions
150 x 62 x 17mm
Maximum Operating Temperature
+150 °C
Toote üksikasjad
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 205,00
tk (ilma käibemaksuta)
€ 250,10
tk (koos käibemaksuga)
1
€ 205,00
tk (ilma käibemaksuta)
€ 250,10
tk (koos käibemaksuga)
1
Osta lahtiselt
| kogus | Ühikuhind |
|---|---|
| 1 - 4 | € 205,00 |
| 5 - 9 | € 189,00 |
| 10 - 24 | € 184,00 |
| 25+ | € 180,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Fuji ElectricMaximum Continuous Collector Current
300 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.39 kW
Package Type
M250
Configuration
Series
Mounting Type
PCB Mount
Channel Type
N
Pin Count
15
Transistor Configuration
Series
Dimensions
150 x 62 x 17mm
Maximum Operating Temperature
+150 °C
Toote üksikasjad
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products