Fuji Electric 6MBI75U4B-120-50 3 Phase Bridge IGBT Module, 75 A 1200 V, 35-Pin M633, PCB Mount
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
390 W
Package Type
M633
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
35
Transistor Configuration
3 Phase
Dimensions
122 x 62 x 17mm
Maximum Operating Temperature
+150 °C
Päritoluriik
Japan
Toote üksikasjad
IGBT Modules 6-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Palun kontrollige hiljem uuesti.
€ 126,00
tk (ilma käibemaksuta)
€ 153,72
tk (koos käibemaksuga)
1
€ 126,00
tk (ilma käibemaksuta)
€ 153,72
tk (koos käibemaksuga)
1
Osta lahtiselt
| kogus | Ühikuhind |
|---|---|
| 1 - 4 | € 126,00 |
| 5 - 9 | € 113,00 |
| 10 - 24 | € 108,00 |
| 25+ | € 104,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
390 W
Package Type
M633
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
35
Transistor Configuration
3 Phase
Dimensions
122 x 62 x 17mm
Maximum Operating Temperature
+150 °C
Päritoluriik
Japan
Toote üksikasjad
IGBT Modules 6-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products