N-Channel MOSFET, 100 A, 127 A, 40 V, 3-Pin IPAK Infineon AUIRFU8403

RS tootekood: 787-0991PBränd: InfineonTootja Part nr.: AUIRFU8403
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A, 127 A

Maximum Drain Source Voltage

40 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

99 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Width

2.39mm

Transistor Material

Si

Series

COOLiRFET

Minimum Operating Temperature

-55 °C

Height

6.22mm

Toote üksikasjad

COOLiRFET™ Power MOSFET, Infineon

Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 0,944

tk (torus) (ilma käibemaksuta)

€ 1,152

tk (torus) (koos käibemaksuga)

N-Channel MOSFET, 100 A, 127 A, 40 V, 3-Pin IPAK Infineon AUIRFU8403
Valige pakendi tüüp

Tootmispakett (Tuub)

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 5.

Tootmine -

Saadaval mitmekordselt 5.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

5

Saadaval mitmekordselt 5
5€ 4,72
10€ 9,44
15€ 14,16
20€ 18,88
25€ 23,60
30€ 28,32
35€ 33,04
40€ 37,76
45€ 42,48
50€ 47,20
55€ 51,92
60€ 56,64
65€ 61,36
70€ 66,08
75€ 70,80

€ 0,944

tk (torus) (ilma käibemaksuta)

€ 1,152

tk (torus) (koos käibemaksuga)

N-Channel MOSFET, 100 A, 127 A, 40 V, 3-Pin IPAK Infineon AUIRFU8403
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Tootmispakett (Tuub)

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 5.

Tootmine -

Saadaval mitmekordselt 5.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

5

Saadaval mitmekordselt 5
5€ 4,72
10€ 9,44
15€ 14,16
20€ 18,88
25€ 23,60
30€ 28,32
35€ 33,04
40€ 37,76
45€ 42,48
50€ 47,20
55€ 51,92
60€ 56,64
65€ 61,36
70€ 66,08
75€ 70,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A, 127 A

Maximum Drain Source Voltage

40 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

99 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Width

2.39mm

Transistor Material

Si

Series

COOLiRFET

Minimum Operating Temperature

-55 °C

Height

6.22mm

Toote üksikasjad

COOLiRFET™ Power MOSFET, Infineon

Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more