Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
10µA
Height
1.5mm
Width
2.5mm
Maximum Power Dissipation
1 W
Dimensions
4.5 x 2.5 x 1.5mm
Maximum Operating Temperature
+150 °C
Length
4.5mm
Base Current
100mA
Päritoluriik
Malaysia
Toote üksikasjad
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,185
tk (rullis 1000) (ilma käibemaksuta)
€ 0,226
tk (rullis 1000) (koos käibemaksuga)
1000
€ 0,185
tk (rullis 1000) (ilma käibemaksuta)
€ 0,226
tk (rullis 1000) (koos käibemaksuga)
1000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
10µA
Height
1.5mm
Width
2.5mm
Maximum Power Dissipation
1 W
Dimensions
4.5 x 2.5 x 1.5mm
Maximum Operating Temperature
+150 °C
Length
4.5mm
Base Current
100mA
Päritoluriik
Malaysia
Toote üksikasjad