N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 Infineon BSB104N08NP3GXUSA1

RS tootekood: 214-8967Bränd: InfineonTootja Part nr.: BSB104N08NP3GXUSA1
brand-logo
Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

80 V

Package Type

MG-WDSON-2

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.0104 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 6,57

€ 0,438 tk (pakis 15) (ilma käibemaksuta)

€ 8,02

€ 0,534 tk (pakis 15) (koos käibemaksuga)

N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 Infineon BSB104N08NP3GXUSA1
Valige pakendi tüüp

€ 6,57

€ 0,438 tk (pakis 15) (ilma käibemaksuta)

€ 8,02

€ 0,534 tk (pakis 15) (koos käibemaksuga)

N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 Infineon BSB104N08NP3GXUSA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

80 V

Package Type

MG-WDSON-2

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.0104 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more