N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC022N04LSATMA1

RS tootekood: 170-2289Bränd: InfineonTootja Part nr.: BSC022N04LSATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.49mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Width

6.35mm

Height

1.1mm

Series

BSC022N04LS

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 1,55

tk (rullis 5000) (ilma käibemaksuta)

€ 1,891

tk (rullis 5000) (koos käibemaksuga)

N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC022N04LSATMA1

€ 1,55

tk (rullis 5000) (ilma käibemaksuta)

€ 1,891

tk (rullis 5000) (koos käibemaksuga)

N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC022N04LSATMA1
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Rull
5000 - 5000€ 1,55€ 7 750,00
10000 - 10000€ 1,50€ 7 500,00
15000+€ 1,45€ 7 250,00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.49mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Width

6.35mm

Height

1.1mm

Series

BSC022N04LS

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more