N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC040N10NS5ATMA1

RS tootekood: 171-1973Bränd: InfineonTootja Part nr.: BSC040N10NS5ATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Typical Gate Charge @ Vgs

58 nC @ 10 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.49mm

Height

1.1mm

Series

BSC040N10NS5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 2,40

tk (pakis 10) (ilma käibemaksuta)

€ 2,928

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC040N10NS5ATMA1
Valige pakendi tüüp

€ 2,40

tk (pakis 10) (ilma käibemaksuta)

€ 2,928

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC040N10NS5ATMA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
10 - 10€ 2,40€ 24,00
20 - 40€ 2,00€ 20,00
50 - 90€ 1,85€ 18,50
100 - 240€ 1,75€ 17,50
250+€ 1,60€ 16,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Typical Gate Charge @ Vgs

58 nC @ 10 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.49mm

Height

1.1mm

Series

BSC040N10NS5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more