N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC046N10NS3GATMA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Height
1.1mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 1,20
tk (rullis 5000) (ilma käibemaksuta)
€ 1,464
tk (rullis 5000) (koos käibemaksuga)
5000
€ 1,20
tk (rullis 5000) (ilma käibemaksuta)
€ 1,464
tk (rullis 5000) (koos käibemaksuga)
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Height
1.1mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products