N-Channel MOSFET, 80 A, 80 V, 8-Pin TDSON Infineon BSC070N10NS5ATMA1

RS tootekood: 171-1963Bränd: InfineonTootja Part nr.: BSC070N10NS5ATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

80 V

Series

BSC070N10NS5

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.49mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 1,55

tk (pakis 10) (ilma käibemaksuta)

€ 1,891

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 80 A, 80 V, 8-Pin TDSON Infineon BSC070N10NS5ATMA1
Valige pakendi tüüp

€ 1,55

tk (pakis 10) (ilma käibemaksuta)

€ 1,891

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 80 A, 80 V, 8-Pin TDSON Infineon BSC070N10NS5ATMA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
10 - 40€ 1,55€ 15,50
50 - 90€ 1,20€ 12,00
100 - 240€ 1,15€ 11,50
250 - 490€ 1,05€ 10,50
500+€ 0,995€ 9,95

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

80 V

Series

BSC070N10NS5

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.49mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more