Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin TISON Infineon BSC0921NDIATMA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Package Type
TISON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
+20 V
Length
5.1mm
Typical Gate Charge @ Vgs
22 nC @ 4.5 V, 5.9 nC @ 4.5 V
Number of Elements per Chip
2
Width
6.1mm
Maximum Operating Temperature
+150 °C
Series
OptiMOS
Minimum Operating Temperature
-55 °C
Height
1.1mm
Päritoluriik
Malaysia
Toote üksikasjad
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Palun kontrollige hiljem uuesti.
€ 1,70
tk (pakis 5) (ilma käibemaksuta)
€ 2,074
tk (pakis 5) (koos käibemaksuga)
5
€ 1,70
tk (pakis 5) (ilma käibemaksuta)
€ 2,074
tk (pakis 5) (koos käibemaksuga)
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Package Type
TISON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Maximum Gate Source Voltage
+20 V
Length
5.1mm
Typical Gate Charge @ Vgs
22 nC @ 4.5 V, 5.9 nC @ 4.5 V
Number of Elements per Chip
2
Width
6.1mm
Maximum Operating Temperature
+150 °C
Series
OptiMOS
Minimum Operating Temperature
-55 °C
Height
1.1mm
Päritoluriik
Malaysia
Toote üksikasjad
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products