Dual N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 Infineon BSG0811NDATMA1

RS tootekood: 215-2466Bränd: InfineonTootja Part nr.: BSG0811NDATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

25 V

Series

OptiMOS

Package Type

TISON-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.003 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

2

Transistor Material

Si

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Lao andmed ajutiselt ei ole saadaval.

€ 1,35

tk (rullis 5000) (ilma käibemaksuta)

€ 1,647

tk (rullis 5000) (koos käibemaksuga)

Dual N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 Infineon BSG0811NDATMA1

€ 1,35

tk (rullis 5000) (ilma käibemaksuta)

€ 1,647

tk (rullis 5000) (koos käibemaksuga)

Dual N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 Infineon BSG0811NDATMA1
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

25 V

Series

OptiMOS

Package Type

TISON-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.003 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more