Infineon SIPMOS® P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1

RS tootekood: 753-2813Bränd: InfineonTootja Part nr.: BSP317PH6327XTSA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

430 mA

Maximum Drain Source Voltage

250 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11.6 nC @ 10 V

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Lao andmed ajutiselt ei ole saadaval.

€ 7,15

€ 0,715 tk (pakis 10) (ilma käibemaksuta)

€ 8,87

€ 0,887 tk (pakis 10) (koos käibemaksuga)

Infineon SIPMOS® P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1
Valige pakendi tüüp

Standard

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 10.

Tootmine -

Saadaval mitmekordselt 10.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

10

Saadaval mitmekordselt 10
10€ 7,15
20€ 14,30
30€ 21,45
40€ 28,60
50€ 35,75
60€ 42,90
70€ 50,05
80€ 57,20
90€ 64,35
100€ 71,50
110€ 78,65
120€ 85,80
130€ 92,95
140€ 100,10
150€ 107,25

€ 7,15

€ 0,715 tk (pakis 10) (ilma käibemaksuta)

€ 8,87

€ 0,887 tk (pakis 10) (koos käibemaksuga)

Infineon SIPMOS® P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Standard

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 10.

Tootmine -

Saadaval mitmekordselt 10.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

10

Saadaval mitmekordselt 10
10€ 7,15
20€ 14,30
30€ 21,45
40€ 28,60
50€ 35,75
60€ 42,90
70€ 50,05
80€ 57,20
90€ 64,35
100€ 71,50
110€ 78,65
120€ 85,80
130€ 92,95
140€ 100,10
150€ 107,25

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

430 mA

Maximum Drain Source Voltage

250 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11.6 nC @ 10 V

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more