Transistor, MOS, N ch,50V,BSS138N
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
PG-SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
360 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.4 nC @ 10 V
Height
1mm
Width
1.3mm
P.O.A.
tk (pakis 100) (ilma käibemaksuta)
Standard
100
P.O.A.
tk (pakis 100) (ilma käibemaksuta)
Standard
100
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Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
PG-SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
360 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.4 nC @ 10 V
Height
1mm
Width
1.3mm