Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6327XTSA2

RS tootekood: 178-7472Bränd: InfineonTootja Part nr.: BSS138NH6327XTSA2
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Lao andmed ajutiselt ei ole saadaval.

€ 150,00

€ 0,05 tk (rullis 3000) (ilma käibemaksuta)

€ 183,00

€ 0,061 tk (rullis 3000) (koos käibemaksuga)

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6327XTSA2

€ 150,00

€ 0,05 tk (rullis 3000) (ilma käibemaksuta)

€ 183,00

€ 0,061 tk (rullis 3000) (koos käibemaksuga)

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6327XTSA2
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Rull
3000 - 3000€ 0,05€ 150,00
6000 - 12000€ 0,047€ 141,00
15000+€ 0,044€ 132,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more