N-Channel MOSFET, 10.9 A, 250 V, 8-Pin PQFN 3 x 3 Infineon BSZ16DN25NS3GATMA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.9 A
Maximum Drain Source Voltage
250 V
Package Type
PQFN 3 x 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.165 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Si
Number of Elements per Chip
1
Series
OptiMOS 3
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,05
tk (rullis 5000) (ilma käibemaksuta)
€ 1,281
tk (rullis 5000) (koos käibemaksuga)
5000
€ 1,05
tk (rullis 5000) (ilma käibemaksuta)
€ 1,281
tk (rullis 5000) (koos käibemaksuga)
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.9 A
Maximum Drain Source Voltage
250 V
Package Type
PQFN 3 x 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.165 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Si
Number of Elements per Chip
1
Series
OptiMOS 3
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products