Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMemory Size
4kbit
Organisation
512 x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
3000ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
5.5 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Words
512
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Toote üksikasjad
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 7,50
€ 1,50 tk (pakis 5) (ilma käibemaksuta)
€ 9,15
€ 1,83 tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 7,50
€ 1,50 tk (pakis 5) (ilma käibemaksuta)
€ 9,15
€ 1,83 tk (pakis 5) (koos käibemaksuga)
Standard
5
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Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMemory Size
4kbit
Organisation
512 x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
3000ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
5.5 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Words
512
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Toote üksikasjad
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.