Infineon IGB30N60H3ATMA1 IGBT, 30 A 600 V, 3+Tab-Pin D2PAK (TO-263), Surface Mount
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
187 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3+Tab
Transistor Configuration
Single
Dimensions
10.31 x 9.45 x 4.57mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1630pF
Maximum Operating Temperature
+175 °C
Energy Rating
1.55mJ
Päritoluriik
Malaysia
Toote üksikasjad
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,30
tk (rullis 1000) (ilma käibemaksuta)
€ 1,586
tk (rullis 1000) (koos käibemaksuga)
1000
€ 1,30
tk (rullis 1000) (ilma käibemaksuta)
€ 1,586
tk (rullis 1000) (koos käibemaksuga)
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
187 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3+Tab
Transistor Configuration
Single
Dimensions
10.31 x 9.45 x 4.57mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1630pF
Maximum Operating Temperature
+175 °C
Energy Rating
1.55mJ
Päritoluriik
Malaysia
Toote üksikasjad
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products