Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1350 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
2066pF
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 14,55
€ 4,85 tk (pakis 3) (ilma käibemaksuta)
€ 18,04
€ 6,014 tk (pakis 3) (koos käibemaksuga)
Standard
3
€ 14,55
€ 4,85 tk (pakis 3) (ilma käibemaksuta)
€ 18,04
€ 6,014 tk (pakis 3) (koos käibemaksuga)
Standard
3
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 3 - 12 | € 4,85 | € 14,55 |
| 15 - 27 | € 4,40 | € 13,20 |
| 30 - 72 | € 4,10 | € 12,30 |
| 75 - 147 | € 3,80 | € 11,40 |
| 150+ | € 3,50 | € 10,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1350 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
2066pF
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products