Infineon IKW75N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Number of Transistors
1
Maximum Power Dissipation
395 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Energy Rating
3.35mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
4500pF
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Palun kontrollige hiljem uuesti.
€ 6,50
tk (pakis 10) (ilma käibemaksuta)
€ 7,93
tk (pakis 10) (koos käibemaksuga)
10
€ 6,50
tk (pakis 10) (ilma käibemaksuta)
€ 7,93
tk (pakis 10) (koos käibemaksuga)
10
Osta lahtiselt
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 10 - 10 | € 6,50 | € 65,00 |
| 20 - 40 | € 6,20 | € 62,00 |
| 50 - 90 | € 5,90 | € 59,00 |
| 100 - 190 | € 5,60 | € 56,00 |
| 200+ | € 5,20 | € 52,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Number of Transistors
1
Maximum Power Dissipation
395 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Energy Rating
3.35mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
4500pF
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products